BSZ215CHXTMA1 parameter specification DataSheet and ECAD Model -ICQQG

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The pictures are for reference only

Brand:

Infineon

Model:

BSZ215CHXTMA1

Description:

MOSFET N/P-CH 20V 8TSDSON

Stock:

15293

Type:

goods in stock

Store:

Shenzhen/Hong kong

DataSheet:

ECAD Model:

Price：$0.07

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Parameters

Current at 25 ° C - continuous drain (Id)

5.1A,3.2A

Drain source voltage (Vdss)

20V

FET Type

N and P Channel Complementary type

FET function

Logic level gate,2.5V drive

Gate charge (Qg) at different Vgs (maximum)

2.8nC @ 4.5V

Input capacitance at different Vds (Ciss) (maximum)

419pF @ 10V

On resistance (maximum) for different Ids and Vgs

55 mΩ @ 5.1A,4.5V

Power - maximum

2.5W

Vgs (th) (maximum) for different Ids

1.4V @ 110µA

packing

TR,CT,bulk

series

Automotive, AEC-Q101, OptiMOS™

working temperature

-55°C ~ 175°C(TJ)

Encapsulation/Housing

8-PowerTDFN

Warehouse

China/Hong Kong

quality

Original genuine

Installation type

Surface mount

Part status

On sale

DataSheet

下载BSZ215CHXTMA1.pdf

BSZ215CHXTMA1（FET, MOSFET）ByInfineonDesign and production, ICQQG Electronic component purchase website provides sufficient inventory15293,Price reference "real-time change" China/Hongkong。 BSZ215CHXTMA1 package/specs, Download BSZ215CHXTMA1、Datasheet。